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(R)
VB125SP
HIGH VOLTAGE IGNITION COIL DRIVER POWER IC
TARGET DATA
TYPE VB125SP
s s s s s s
VCL 370 V
ICL 9A
ICC 200 mA
PRIMARY COIL VOLTAGE INTERNALLY SET COIL CURRENT LIMIT INTERNALLY SET LOGIC LEVEL COMPATIBLE INPUT BATTERY OPERATION SINGLE FLAG-ON COIL CURRENT TEMPERATURE COMPENSATED HIGH VOLTAGE CLAMP
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DESCRIPTION The VB125SP is a high voltage power integrated circuit made using SGS-THOMSON Microelectronics Vertical Intelligent Power Technology, with vertical current flow power darlington and logic level compatible driving circuit. The VB125SP can be directly biased by using the 12V battery voltage, thus avoiding to use a low voltage regulator. It has built-in protection circuits for coil current limiting and collector voltage clamping. It is suitable as smart, high voltage, high current interface in advanced electronic ignition system. BLOCK DIAGRAM VCC 6 INPUT 9
1
PowerSO-10
CS 8
HVC
TAB
DRIVER
FLAG FLAG 10 VOLTAGE REFERENCE THERMAL PROTECTION
RSENSE
7 GND (Control)
(*) Pins 1...5 September 1997
*
GND (Power)
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This is preliminary information on a new product in development or undergoing evaluation. Details are subject to change without notice.
1
VB125SP
ABSOLUTE MAXIMUM RATING
Symbol HV C IC VCC ICC IS VIN PTOT VESD VESD Tj TSTG Parameter Collector Voltage (Internally Limited) Collector Current (Internally Limited) Driving Stage Supply Voltage Driving Circuitry Supply Current Logic Circuitry Supply Ccurrent Input Voltage Power Dissipation ESD Voltage (HVC Pin) ESD Voltage (Other Pin) Operating Junction Temperature Storage Temperature Range Value -0.3V to VCLAMP 10 -0.2 to 40 400 100 -0.3 to 6 TBD -4 to 4 -2 to 2 -40 to 150 -55 to 150 Unit V A V mA mA V W KV KV C C
THERMAL DATA
Rthj-case Rthj-amb Thermal Resistance Junction - Case Thermal Resistance Junction - Ambient MAX MAX 1.2 62.5 C/W C/W
CONNECTION DIAGRAM HVC
VCC GND Cs INPUT FLAG
6
5
GND GND GND GND
10
1
GND
PIN FUNCTION
No 1-5 6 7 8 9 10 TAB (*) Pin 6 must be connected to pins 1-5 externally Name GND VCC GND CS INPUT FLAG HVC FUNCTION Emitter Power Ground Logic Supply Voltage Control Ground (*) Logic Level Supply Voltage Filter Capacitor Logic Input Channel Diagnostic Output Signal Primary Coil Output Driver
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1
VB125SP
ELECTRICAL CHARACTERISTICS (Vbat = 6 to 24V; -40CSymbol VCL VCE(sat) ICC(off) ICC(on) ICL VinH VinL V IN(hyst.) IinH IinL VdiagH VdiagL IdiagTH Idiag Idiag(leak) VF Es/b Tj td(on) td(off) td(off) Parameter High Voltage Clamp Saturation Voltage of the Power Stage Power Off Supply Current Power On Supply Current Coil Current Limit High Level Input Voltage Low Level Input Voltage Input Hysteresis Voltage High Level Input Current Low Level Input Current High Level Diagnostic Output Voltage Low Level Diagnostic Output Voltage Current Threshold Level Diagnostic High Level Flag Output Current Leakage Current on Flag Output Antipallel Diode Forward Voltage Single Pulse Avalanche Energy Thermal Output Current Control Turn-on Delay Time of Output Current Turn-off Delay Time of Output Current Turn-off Delay Time of Output Current Test Conditions IC = 6.5 A; (See Note 2) IC = 5A; Vin = 4V (See Note 3) Vin=0.4V Vbat= 14V(Notes 4-5) Vin=0.4V VIn = 4 V V bat = 24 V Vbat<14V (Note 4-5) 8 4 0.4 10 CEXT = 1 nF C EXT = 1 nF 4.25 0.5 10 2 300 150 TBD TBD TBD 4.5 Min. 340 Typ. 370 Max. 400 2 20 80 220 300 10 0.8 Vin = 4 V Vin = 0.8 V REXT = 22 K (See Note 8) REXT = 22 K (See Note 8) Tj = 25 C (See Note 7and fig. 5) IC>IDiagTH (See Note 7) Vin = LOW IC = -1 A IN = ON (See Note 9) (See Note 10) (See Note 11) (See Note 11) 150 -100 5.5 0.5 4.75 Unit V V mA mA mA mA A V V V A A V V A mA A V mJ C s s s
Vin = 4 V V bat = 24 V Vin = 4 V (See Note 6-7)
3.5
FIGURE 1: Temperature Compensated High Voltage Clamp
HVC nVZ
FIGURE 2: Electrical Characteristic of the Circuit Shown in Figure 1
IC [mA]
40 R i1 KV be Rii 20 slope Ri 10 Rsens 100 PWR GND 200 nVZ 300 V CL 400 V
CE
30
[V]
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VB125SP
NOTE 1 Parametric degradation are allowed with 6V < Vbat < 10V and Vbat > 24V. NOTE 2 In the high voltage clamping structure of this device a temperature compensation has been implemented. The circuit schematic is shown in fig. 1. The KVbe cell takes care of the temperature compensation. The whole electrical characteristic of the new circuit is shown in fig. 2. Up to VCE=nV Z no current will flow into the collector (just the leakage current of the power stage); for nV Z < VCE < VCL a current begins to flow across the resistances of the KVbe compensation circuit (typical slope 20 K ) as soon as the Vcl is reached the dinamic resistance drop to ~ 4 to protect the device against overvoltage (See Fig. 3). NOTE 3 The saturation voltage of the Power stage includes the drop on the sensing resistor. NOTE 4 Considering the different ways of operation of the device (with or without spark, etc...) there are some short periods of time in which the output terminal (HVC) is pulled below ground by a negative current due to leakage inductances and stray capacitances of the ignition coil.With VIPower devices, if no corrective action is taken, these negative currents can cause parasitic glitches on the diagnostic output. To kill this potential problem, a circuit that avoids the possibility for the HV C to be pulled undeground, by sending the required negative current from the battery is implemented in the VB125SP.For this reason there are some short periods in which a current exceeding 220 mA flows in the pin V D. NOTE 5 A zener protection of 16V (typical) is placed on the supply pin (VCC) of the chip to protect the internal circuitry. For this reason, when the battery voltage exceedes that value, the current flowing into Vcc pin can be greater than the maximum current specified at Vbat=14V (both in power on and power off condictions) : it will be limited by an internal resistor. NOTE 6 The primary coil current value Icl must be measured 1 ms after desaturation of the power stage. NOTE 7 These limits apply with regard to the minimum battery voltage and resistive drop on the coil and cables that permit to reach the limitation or diagnostic level. NOTE 8 No internal Pull-Down. NOTE 9 Tjmin= 150 C means that the behaviour of the device will not be affected for junction temperature lower than 150 C. For higher temperature, the thermal protection circuit will begin its action reducing the Icl limit according with the power dissipation. Chip temperature is a function of the Rth of the whole system in which the device will be operating (See Fig.4). NOTE 10 Propagation Time measured from input voltage rising edge to 50% of output voltage falling edge. NOTE 11 As soon as the input signal is switched low the stored charges in the base of the power transistor are removed and the so called Turn-off Delay Time of Coil Current begins; after at the Turn-off Fall Time of Coil Current starts and, at the same time, the HVC rises. tdLH is defined as the time between the negative edge of the input pulse to the point where the HVC reaches 100V. tfLH is defined as the delay between the 90% and the 10% of the coil current.
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VB125SP
FIGURE 3: Vcl with load L 4 mH
FIGURE 4: Output Current Waveform after Thermal Protection Activation.
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1
VB125SP
FIGURE 5: Waveforms
FIGURE 6: Flag Current Versus Temperature
Iflag (A)
INPUT 4.5A IC
6.5A
5.0
4.5
4.0
HVC
3.5
FLAG
-50
0
50
100
Tcase (oC)
FIGURE 7: Application Circuit
VBAT
V CC INPUT
HVC
P
1nF 22K
FLAG
VB125SP
100nF
CS GND PWR GND
CEXT
R EXT
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1
VB125SP
PowerSO-10 MECHANICAL DATA
DIM. A A1 B c D D1 E E1 E2 E3 E4 e F H h L q mm TYP. inch TYP.
MIN. 3.35 0.00 0.40 0.35 9.40 7.40 9.30 7.20 7.20 6.10 5.90 1.25 13.80
MAX. 3.65 0.10 0.60 0.55 9.60 7.60 9.50 7.40 7.60 6.35 6.10 1.35 14.40
MIN. 0.132 0.000 0.016 0.013 0.370 0.291 0.366 0.283 0.283 0.240 0.232 0.049 0.543
MAX. 0.144 0.004 0.024 0.022 0.378 0.300 0.374 0.291 0.300 0.250 0.240 0.053 0.567
1.27
0.050
0.50 1.20 1.70 1.80 0.047
0.002 0.071 0.067
B
0.10 A B
10
= =
6
= = =
H
=
E
=
=
E2
E3
E1
E4
=
=
A
1
5
=
SEATING PLANE DETAIL "A" Q
e
0.25
M
B
C D
h
= D1 = = =
A F A1
=
SEATING PLANE A1
L DETAIL"A"
0068039-C
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VB125SP
Information furnished is believed to be accurate and reliable. However, SGS-THO MSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectronics. (c) 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved. SGS-THO MSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands - Singapore Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A .
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